Temperature evolution of electron transport in single-donor transistors

Abstract

In nanometer-scale transistors, single-electron transport via individual impurity (dopant) atoms became recently measurable, in particular at low temperatures. A variety of functions were demonstrated using single-dopant transistors as a basic unit. For practical applications, it is, however, required that their operation temperature is enhanced towards room temperature. Here, we present experimental results on the temperature evolution of single-donor transistor characteristics in low and intermediate temperature range. Basic guidelines for improving the operation temperature are also outlined.