Effect of Donor-level Deepening in nm-scale Si SOI-MOSFETs

  • Michiharu TABE, et al.


Recently, the role of dopants in Si devices has been changing after a long and successful history in Si integrated circuit technology; changing from “bulk-type†dopants, with averaged potential, to “atom-type†dopants, with individual atomistic potential. Furthermore, dopant energy levels are modified by the effect of dielectric misfit with surrounding Si and the outside structure. This fact creates an artificial deep donor and may be significantly important in extension of operation temperature range of dopant atom devices from low temperatures (<50 K) to room temperature.

How to Cite
TABE, ET AL., Michiharu. Effect of Donor-level Deepening in nm-scale Si SOI-MOSFETs. Journal of Advanced Research in Physics, [S.l.], v. 2, n. 1, june 2017. ISSN 2069-7201. Available at: <http://stoner.phys.uaic.ro/jarp/index.php?journal=jarp&page=article&op=view&path%5B%5D=36>. Date accessed: 20 mar. 2023.